Double Barrier 1D

Application ID: 47041


The double barrier structure is of interest because of its application in semiconductor devices such as resonant-tunneling diodes.

This verification example demonstrates the Schrödinger Equation interface to set up a simple 1D GaAs/AlGaAs double barrier structure to analyze the quasibound states and their time evolution, the resonant tunneling phenomenon, and the transmission as a function of energy. The model results show very good agreement with analytical results, both for the computed eigenenergies for the quasibound states and the resonant tunneling condition, as well as the computed transmission coefficients.

This model example illustrates applications of this type that would nominally be built using the following products:

Semiconductor Module