Double Barrier 1D
Application ID: 47041
The double barrier structure is of interest because of its application in semiconductor devices such as resonant-tunneling diodes.
This verification example demonstrates the Schrödinger Equation interface to set up a simple 1D GaAs/AlGaAs double barrier structure to analyze the quasibound states and their time evolution, the resonant tunneling phenomenon, and the transmission as a function of energy. The model results show very good agreement with analytical results, both for the computed eigenenergies for the quasibound states and the resonant tunneling condition, as well as the computed transmission coefficients.
This model example illustrates applications of this type that would nominally be built using the following products:Semiconductor Module
however, additional products may be required to completely define and model it. Furthermore, this example may also be defined and modeled using components from the following product combinations:
The combination of COMSOL® products required to model your application depends on several factors and may include boundary conditions, material properties, physics interfaces, and part libraries. Particular functionality may be common to several products. To determine the right combination of products for your modeling needs, review the Specification Chart and make use of a free evaluation license. The COMSOL Sales and Support teams are available for answering any questions you may have regarding this.