Forward Recovery of a PIN Diode

Application ID: 58031


This tutorial simulates the turn-on transient (forward recovery) of a simple PIN diode, based on the book "Fundamentals of Power Semiconductor Devices" by B. J. Baliga (p. 242, 2008 edition). The diode is current driven with a constant ramp rate of 1e9, 2e9 and 1e10 A/cm^2/sec and a steady state current density of 100 A/cm^2. The resulting time evolution of the device voltage and electron concentration compare well to those shown in the book (Fig. 5.30 ~ 5.31). For a more sophisticated example including band gap narrowing, carrier-carrier scattering, and external load circuit elements, see the tutorial "Reverse Recovery of a PIN Diode".

This model example illustrates applications of this type that would nominally be built using the following products:

Semiconductor Module