Self-Consistent Schrödinger-Poisson Results for a GaAs Nanowire

Application ID: 67681


This benchmark model simulates a GaAs nanowire using the self-consistent Schrödinger-Poisson theory to compute the electron density and the confining potential profiles. The predefined Schrödinger-Poisson multiphysics coupling feature is combined with the dedicated Schrödinger-Poisson study type to provide streamlined procedure for model setup and automated creation of self-consistent iterations with tunable parameters for optimizing the convergence under different conditions. The computed electron density and confining potential profiles compare well with the figures in the reference paper, with both profiles reproducing the distinct Friedel-type spatial oscillations at low temperatures.

This model example illustrates applications of this type that would nominally be built using the following products:

Semiconductor Module