Self-Consistent Schrödinger-Poisson Results for a GaAs Nanowire
Application ID: 67681
This benchmark model simulates a GaAs nanowire using the self-consistent Schrödinger-Poisson theory to compute the electron density and the confining potential profiles. The predefined Schrödinger-Poisson multiphysics coupling feature is combined with the dedicated Schrödinger-Poisson study type to provide streamlined procedure for model setup and automated creation of self-consistent iterations with tunable parameters for optimizing the convergence under different conditions. The computed electron density and confining potential profiles compare well with the figures in the reference paper, with both profiles reproducing the distinct Friedel-type spatial oscillations at low temperatures.
This model example illustrates applications of this type that would nominally be built using the following products:Semiconductor Module
however, additional products may be required to completely define and model it. Furthermore, this example may also be defined and modeled using components from the following product combinations:
The combination of COMSOL® products required to model your application depends on several factors and may include boundary conditions, material properties, physics interfaces, and part libraries. Particular functionality may be common to several products. To determine the right combination of products for your modeling needs, review the Specification Chart and make use of a free evaluation license. The COMSOL Sales and Support teams are available for answering any questions you may have regarding this.