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Fowler-Nordheim tunneling
Posted May 15, 2021, 12:30 p.m. EDT Materials, Mesh, Modeling Tools & Definitions Version 5.6 0 Replies
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I am trying to model Fowler-Nordheim (FN) tunneling on semiconductor other than Si, like AlN. To do so, I prepared a simple and straight forward structure which was simply based on one domain, i.e., AlN that has two metal contacts to apply voltage. This structure didn’t work because COMSOL didn’t recognize or consider a boundary between AlN and metal contact hence I wasn’t able to select that boundary and set up Tunnel Barrier node. My first question, How to overcome this issue?
I checked EEPROM example and to solve this issue, I added a thin highly dopped n-type layer between Metal and AlN. I followed the same concept and encountered with another error. I noticed, high doping dpesn't work and error would disappear by changing doping to very low level, why is that? I have no idea.
For quick answer, I tried a simple Mesh but still it is not working. Are there any suggestions?
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Hello Manuchehr Ebrahimi
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