Capacitively Coupled Plasma
Application ID: 23351
The NIST Gaseous Electronics Conference has provided a platform for studying Capacitively Coupled Plasma (CCP) reactors, which is what this application is based upon.
The operating principle of a capacitively coupled plasma is different when compared to the inductive case. In a CCP reactor, the plasma is sustained by applying a sinusoidal electrostatic potential across a small gap filled with a low pressure gas (typically 1 Torr and in this case, the gas is Argon). The mechanism of power deposition into a CCP reactor is highly nonlinear and the system needs sufficient RF cycles in order to reach a periodic steady-state solution.
This application allows the user to provide inputs to configure the properties of both the plasma and the dielectric along with general operation inputs such as the physical dimensions of the cell, the number of RF cycles and driving frequency and voltage.
Plots show time/period averaged data and instantaneous data over the last RF cycle, along with excited species evolution. Animations of the time-averaged data are also available. Furher, the CCP Simulator returns period-averaged deposited power and the peak current.
This application example illustrates applications of this type that would nominally be built using the following products:Plasma Module
however, additional products may be required to completely define and model it. Furthermore, this example may also be defined and modeled using components from the following product combinations:
The combination of COMSOL® products required to model your application depends on several factors and may include boundary conditions, material properties, physics interfaces, and part libraries. Particular functionality may be common to several products. To determine the right combination of products for your modeling needs, review the Specification Chart and make use of a free evaluation license. The COMSOL Sales and Support teams are available for answering any questions you may have regarding this.